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Time-resolved defect production and annealing during electron-beam processing of silicon

โœ Scribed by R. Langfeld; H. Baumann; K. Bethge; E. F. Krimmel; W. Wondrak


Publisher
Springer
Year
1984
Tongue
English
Weight
313 KB
Volume
33
Category
Article
ISSN
1432-0630

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Time-resolved scanned electron beam anne
โœ E.F. Krimmel; A.G.K. Lutsch ๐Ÿ“‚ Article ๐Ÿ“… 1984 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 368 KB

Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950ยฐC and/or 300 s with a scanned an