𝔖 Bobbio Scriptorium

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Nature of dislocation loops, induced in silicon during the process of phosphorus ion implantation and subsequent annealing: S K Maksimov et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 227–230 (in Russian)

Publisher: Elsevier Science
Year: 1975
Tongue: English
Weight: 162 KB
Volume: 25
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(75)91464-5

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The influence of ion current density and

The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysical properties of silicon doped by implantation of boron and phosphorus: V K Vasilev et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 247–250 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB