𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Impurity Profiles at Multi-Pulse Electron-Beam Annealing of Ion-Implanted Silicon

✍ Scribed by Dvurechenskii, A. V. ;Grötzschel, R. ;Igonina, N. M. ;Kashnikov, B. P. ;Komolova, N. I.


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
318 KB
Volume
72
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Pulsed electron-beam annealing of ion-im
📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 162 KB

width of the energy distribution curve, ranging from about 50 to 15 eV FWHM, is found to depend on the applied voltage VA and the length-to-diameter ratio (+ of the channel, and to vary with output current. The results can be explained in terms of the normalized field strength near the output end of

Time-resolved scanned electron beam anne
✍ E.F. Krimmel; A.G.K. Lutsch 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 368 KB

Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950°C and/or 300 s with a scanned an