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Toroidal defect at the heterointerface between GaAs and AlxGa1−xAs epitaxial layer

✍ Scribed by Kunio Kaneko; Hiroyuki Nagasawa; Kazuo Kajiwara


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
624 KB
Volume
47
Category
Article
ISSN
0022-0248

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Preparation and Investigation of Epitaxi
✍ Dr. Zh. I. Alferov; V. M. Andreyev; V. I. Korol'Kov; E. L. Portnoi 📂 Article 📅 1969 🏛 John Wiley and Sons 🌐 English ⚖ 554 KB

Single crystal epitaxial layers of A1,Gal -,As solid solutions and GaAs-Al,Gal -,As heterojunctions were obtained on gallium arsenide substrates by crystallization from a solution of arsenic in a gallium-aluminium melt,. Multilayer structures of the type p(n)GaAs-p(n)Al,~Gal-,,As-p(n)Al,,Gal-., As-n