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Investigations on deep traps in GaAs and (AlxGa1−x)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin

✍ Scribed by Z. Spika; G. Zimmermann; W. Stolz; E.O. Göbel; P. Gimmnich; J. Lorberth; A. Greiling; A. Salzmann; S. Weiß; U. Sudjadi; A. Bock; R. Kassing


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
423 KB
Volume
146
Category
Article
ISSN
0022-0248

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