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Correlation between crystal defects and the band gap of epitaxially grown Hg1 − xZnxSe on GaAs(001)

✍ Scribed by T. Behr; S. Einfeldt; D. Hommel; C.R. Becker; G. Landwehr; H. Cerva


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
326 KB
Volume
159
Category
Article
ISSN
0022-0248

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