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Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs

✍ Scribed by J.R. Gong; P.C. Colter; D. Jung; S.A. Hussien; C.A. Parker; A. Dip; F. Hyuga; W.M. Duncan; S.M. Bedair

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
358 KB
Volume
107
Category
Article
ISSN
0022-0248

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Liquid phase epitaxy of AlxGa1–xAs-GaAs
Liquid phase epitaxy of AlxGa1–xAs-GaAs heterostructures
✍ Zh. I. Alferov; V. M. Andreyev; S. G. Konnikov; V. R. Larionov; G. N. Shelovanov 📂 Article 📅 1975 🏛 John Wiley and Sons 🌐 English ⚖ 539 KB

## Abstract This paper is concerned with the investigation of the peculiarities of the application of liquid phase epitaxy for obtaining multilayer structures with heterojunctions in the AlAs–GaAs system. Segregational depletion of Al in liquid and in solid phases is characteristic of this system.