## Abstract This paper is concerned with the investigation of the peculiarities of the application of liquid phase epitaxy for obtaining multilayer structures with heterojunctions in the AlAs–GaAs system. Segregational depletion of Al in liquid and in solid phases is characteristic of this system.
Structure defects investigation of GaAs and AlxGa1−xAs epitaxial layers
✍ Scribed by V. N. Vasilevskaya; R. V. Konakova; G. D. Melnikov; G. N. Semenova; Yu A. Tkhorik
- Publisher
- John Wiley and Sons
- Year
- 1980
- Tongue
- English
- Weight
- 224 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0232-1300
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