Zinc Incorporation in AlxGa1-x As and GaAs Epitaxial Layers
β Scribed by Dr. F. P. Herrmann; G. Stadermann; St. Stoeff
- Publisher
- John Wiley and Sons
- Year
- 1979
- Tongue
- English
- Weight
- 125 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0232-1300
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π SIMILAR VOLUMES
Single crystal epitaxial layers of A1,Gal -,As solid solutions and GaAs-Al,Gal -,As heterojunctions were obtained on gallium arsenide substrates by crystallization from a solution of arsenic in a gallium-aluminium melt,. Multilayer structures of the type p(n)GaAs-p(n)Al,~Gal-,,As-p(n)Al,,Gal-., As-n
## Abstract A method is given for the rapid determination of the composition and the carrier concentration in GaAs~1βx~P~x~ epitaxial layers. The composition was determined from the photoresponse of the Schottkyβbarriers. A calibration curve was constructed using the absolute composition data deter
A theoretical model is proposed to describe doped nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface ef