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Determination of Composition and Inhomogeneity in GaAs1−xPx Epitaxial Layers

✍ Scribed by M. Somogyi; Á. Barna


Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
143 KB
Volume
9
Category
Article
ISSN
0232-1300

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✦ Synopsis


Abstract

A method is given for the rapid determination of the composition and the carrier concentration in GaAs~1−x~P~x~ epitaxial layers. The composition was determined from the photoresponse of the Schottky‐barriers. A calibration curve was constructed using the absolute composition data determined by microprobe analysis. The concentration values were obtained from the usual C‐V dependence.


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