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Investigation of MOCVD growth of AlxGa1−xAs/GaAs and AlxGa1−xAs/GaAs/AlxGa1−xAs/GaAs multilayer structures with high Al content

✍ Scribed by Gao Hongkai; Yun Feng; Zhang Jikang; Hou Xun; Gong Ping

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
250 KB
Volume
107
Category
Article
ISSN
0022-0248

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