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Threshold voltage modelling and gate oxide thickness effect on polycrystalline silicon thin-film transistors

✍ Scribed by Gupta, Navneet


Book ID
124069496
Publisher
Royal Swedish Academy of Sciences
Year
2007
Tongue
English
Weight
211 KB
Volume
76
Category
Article
ISSN
0031-8949

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Threshold voltage shift under electrical
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## Abstract The crucial influence of the interface between the gate dielectric and intrinsic layer has been studied in detail for amorphous silicon, polymorphous silicon and microcrystalline silicon bottom gate thin‐film transistors. We show that the electrical parameters of the TFTs depend directl