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An Effective Channel Mobility-Based Analytical On-Current Model for Polycrystalline Silicon Thin-Film Transistors

โœ Scribed by Mingxiang Wang; Man Wong

Book ID
114618639
Publisher
IEEE
Year
2007
Tongue
English
Weight
352 KB
Volume
54
Category
Article
ISSN
0018-9383

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Short channel effects are incorporated to investigate the impact of the channel length on the turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT). The developed threshold voltage and field effect mobility are the key parameters in analysing the above-threshold cha