Interface roughness scattering in thin q
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S. Elhamri; M. Ahoujja; R. Hudgins; D.B. Mast; R.S. Newrock; W.C. Mitchel; M. Ra
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Article
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1995
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Elsevier Science
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English
⚖ 226 KB
Electronic transport coefficients of very thin undoped GaInP/GaAs quantum wells have been measured at low temperatures by the low field Hall effect and by the Shubnikov-de Haas effect. Unlike the case in undoped AlGaAs/GaAs, strong Shubnikov-de Haas oscillations were observed in this structure after