Interface roughness scattering in thin quantum wells

✍ Scribed by S. Elhamri; M. Ahoujja; R. Hudgins; D.B. Mast; R.S. Newrock; W.C. Mitchel; M. Razeghi; M. Erdtmann

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 226 KB
• Volume: 18
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1995.1090

✦ Synopsis

Electronic transport coefficients of very thin undoped GaInP/GaAs quantum wells have been measured at low temperatures by the low field Hall effect and by the Shubnikov-de Haas effect. Unlike the case in undoped AlGaAs/GaAs, strong Shubnikov-de Haas oscillations were observed in this structure after increasing the carrier concentration via the persistent photoconductivity effect. Low temperature mobilities close to (70000 \mathrm{~cm}^{2} \mathrm{~V}^{-1} \mathrm{~s}^{-1}) at a carrier concentration of (6.5 \times 10^{11} \mathrm{~cm}^{-2}) were observed in a (25 \AA) quantum well. The results are compared with the theory of interace roughness scattering and we find that the mobility of our samples goes as (L^{1.3}) where (L) is the well width. We conclude that the barrier height of the confining potential plays a very important role in determining the effect of interface roughness scattering on the mobility of very thin quantum wells.