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Study on interface roughness in GaAsAlGaAs single quantum wells

✍ Scribed by Xinghua Wang; Houzhi Zheng; Tao Yu; Reino Laiho

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
274 KB
Volume
12
Category
Article
ISSN
0749-6036

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πŸ“œ SIMILAR VOLUMES

Interface roughness scattering in thin q
Interface roughness scattering in thin quantum wells
✍ S. Elhamri; M. Ahoujja; R. Hudgins; D.B. Mast; R.S. Newrock; W.C. Mitchel; M. Ra πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 226 KB

Electronic transport coefficients of very thin undoped GaInP/GaAs quantum wells have been measured at low temperatures by the low field Hall effect and by the Shubnikov-de Haas effect. Unlike the case in undoped AlGaAs/GaAs, strong Shubnikov-de Haas oscillations were observed in this structure after