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Interface roughness and confined LO phonons in quantum wells

✍ Scribed by G. Fasol; M. Tanaka; H. Sakaki; Y. Horikoshi


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
271 KB
Volume
95
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES


Interface roughness scattering in thin q
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Electronic transport coefficients of very thin undoped GaInP/GaAs quantum wells have been measured at low temperatures by the low field Hall effect and by the Shubnikov-de Haas effect. Unlike the case in undoped AlGaAs/GaAs, strong Shubnikov-de Haas oscillations were observed in this structure after

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In semiconductor microstructures with many layers, the phonon modes change from their bulk form and split into 'confined LO phonons' (LC) and 'interface phonons' (IF), the number and variety of which depends on both the number of layers and the number of different materials in the structure. This af