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Interface roughness scattering in GaAs/AlAs quantum wells

✍ Scribed by Sakaki, H.; Noda, T.; Hirakawa, K.; Tanaka, M.; Matsusue, T.

Book ID
120215349
Publisher
American Institute of Physics
Year
1987
Tongue
English
Weight
578 KB
Volume
51
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES

Interface roughness scattering in thin q
Interface roughness scattering in thin quantum wells
✍ S. Elhamri; M. Ahoujja; R. Hudgins; D.B. Mast; R.S. Newrock; W.C. Mitchel; M. Ra πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 226 KB

Electronic transport coefficients of very thin undoped GaInP/GaAs quantum wells have been measured at low temperatures by the low field Hall effect and by the Shubnikov-de Haas effect. Unlike the case in undoped AlGaAs/GaAs, strong Shubnikov-de Haas oscillations were observed in this structure after