Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well
β Scribed by Jin, Xiao; Zhang, Hong; Zhou, Rongxiu; Jin, Zhao
- Book ID
- 121237624
- Publisher
- IOP Publishing
- Year
- 2013
- Tongue
- English
- Weight
- 239 KB
- Volume
- 34
- Category
- Article
- ISSN
- 1674-4926
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π SIMILAR VOLUMES
Hot-electron transport in a AIGaAs/GaAs quantum well system is simulated using Monte Carlo techniques and the dependence on doping density in the AIGaAs is explored, taking into account electronelectron scattering. The appearance of a scattering-induced ndr over a range of doping densities, previous
Electronic transport coefficients of very thin undoped GaInP/GaAs quantum wells have been measured at low temperatures by the low field Hall effect and by the Shubnikov-de Haas effect. Unlike the case in undoped AlGaAs/GaAs, strong Shubnikov-de Haas oscillations were observed in this structure after