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Scattering-induced ndr in AlGaAs/GaAs quantum wells

✍ Scribed by Mustafa Al-Mudares; Brian K. Ridley

Publisher
Elsevier Science
Year
1985
Weight
203 KB
Volume
134
Category
Article
ISSN
0378-4363

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✦ Synopsis

Hot-electron transport in a AIGaAs/GaAs quantum well system is simulated using Monte Carlo techniques and the dependence on doping density in the AIGaAs is explored, taking into account electronelectron scattering. The appearance of a scattering-induced ndr over a range of doping densities, previously suggested on the basis on simple models, is confirmed.

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