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Stress Induced Anisotropy of Fermi Surface in p-GaAs/AlGaAs Quantum Wells

✍ Scribed by K. I. Kolokolov; A. M. Savin; O. P. Hansen; S. D. Beneslavski; N.Ya. Minina


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
203 KB
Volume
211
Category
Article
ISSN
0370-1972

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We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schro Β¨dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density