We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 โข C for 30 s). The photolumine
GaAs/AlGaAs quantum well infrared photodetectors
โ Scribed by T. Miyatake; S. Horihata; T. Ezaki; H. Kubo; N. Mori; K. Taniguchi; C. Hamaguchi
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 291 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
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