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Theory of Filling of High-Aspect Ratio Trenches and Vias in Presence of Additives

✍ Scribed by West, Alan C.

Book ID
118192013
Publisher
The Electrochemical Society
Year
2000
Tongue
English
Weight
215 KB
Volume
147
Category
Article
ISSN
0013-4651

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While etching high aspect ratio trenches into silicon with reactive ion etching (POE) using an SFJO2 chemistry it is observed that the etch rate is depending on the mask opening. This effect is known as POE lag and is caused by the depletion of etching ions and radicals or inhibiting neutrals during