✦ LIBER ✦

The use of the amphoteric nature of impurity silicon atoms for obtaining planarp-njunctions on GaAs (111)A substrates by molecular beam epitaxy

✍ Scribed by G. B. Galiev; V. É. Kaminskii; V. G. Mokerov; L. É. Velikhovskii

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Molecular beam epitaxy growth of a plana

✍ Galiev, G; Kaminskii, V; Milovzorov, D; Velihovskii, L; Mokerov, V 📂 Article 📅 2002 🏛 Institute of Physics 🌐 English ⚖ 177 KB

Ultrathin InAs/GaAs single quantum wells

✍ Mashita, M.; Numata, T.; Koo, B.H.; Makino, H.; Yao, T. 📂 Article 📅 2003 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 383 KB

Properties and structure of GaAs films g

✍ G. B. Galiev; V. G. Mokerov; Yu. V. Slepnev; Yu. V. Khabarov; A. A. Lomov; R. M. 📂 Article 📅 1999 🏛 Springer 🌐 English ⚖ 80 KB

Study of the structural perfection and d

✍ G. B. Galiev; V. G. Mokerov; V. V. Saraikin; Yu. V. Slepnev; G. I. Shagimuratov; 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 232 KB

Preferential migration of indium atoms o

✍ T. Kitada; A. Wakejima; N. Tomita; S. Shimomura; A. Adachi; N. Sano; S. Hiyamizu 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 418 KB

The fabrication of a novel composite GaA

✍ J. de Boeck; J. Alay; J. Vanhellemont; B. Brijs; W. Vandervorst; G. Borghs; M. B 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 608 KB