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The fabrication of a novel composite GaAs/SiO2 nucleation layer on silicon for heteroepitaxial overgrowth by molecular beam epitaxy

✍ Scribed by J. de Boeck; J. Alay; J. Vanhellemont; B. Brijs; W. Vandervorst; G. Borghs; M. Blondeel; C. Vinckier


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
608 KB
Volume
9
Category
Article
ISSN
0921-5107

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