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Ultrathin InAs/GaAs single quantum wells grown on GaAs [111]A substrates by molecular beam epitaxy

โœ Scribed by Mashita, M.; Numata, T.; Koo, B.H.; Makino, H.; Yao, T.

Book ID
114456023
Publisher
The Institution of Electrical Engineers
Year
2003
Tongue
English
Weight
383 KB
Volume
150
Category
Article
ISSN
1350-2433

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We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo