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AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

โœ Scribed by Toshihide Watanabe; Teiji Yamamoto; Pablo O. Vaccaro; Hajime Ohnishi; Kazuhisa Fujita


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
932 KB
Volume
27
Category
Article
ISSN
0026-2692

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We used photoluminescence spectroscopy in order to investigate the carriers escape mechanisms in In 0.15 Ga 0.85 As/GaAs quantum wells grown on top of nominal ( 001) and 2 โ€ข -, 4 โ€ข -and 6 โ€ข -off (001) towards (111)A GaAs substrates. We described the escape processes using two models that fit the Arr

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