AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
โ Scribed by Toshihide Watanabe; Teiji Yamamoto; Pablo O. Vaccaro; Hajime Ohnishi; Kazuhisa Fujita
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 932 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0026-2692
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๐ SIMILAR VOLUMES
We used photoluminescence spectroscopy in order to investigate the carriers escape mechanisms in In 0.15 Ga 0.85 As/GaAs quantum wells grown on top of nominal ( 001) and 2 โข -, 4 โข -and 6 โข -off (001) towards (111)A GaAs substrates. We described the escape processes using two models that fit the Arr
Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium