𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Strain relaxation in InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

✍ Scribed by Pablo O. Vaccaro; Mitsuo Takahashi; Kazuhisa Fujita; Toshihide Watanabe

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
444 KB
Volume
150
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Carriers escape mechanisms in shallow In
Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
✍ A. Tabata; S. Martini; A.A. Quivy; A.M. Ceschin; J.R. Leite πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 87 KB

We used photoluminescence spectroscopy in order to investigate the carriers escape mechanisms in In 0.15 Ga 0.85 As/GaAs quantum wells grown on top of nominal ( 001) and 2 β€’ -, 4 β€’ -and 6 β€’ -off (001) towards (111)A GaAs substrates. We described the escape processes using two models that fit the Arr

Terrace length commensurability and surf
Terrace length commensurability and surface reconstruction in highly strained InGaAs/GaAs quantum wells grown on vicinal substrates
✍ C. LΓ³pez; R. Mayoral; F. Meseguer; J.A. Porto; J. SΓ‘nchez-Dehesa; N. Grandjean; πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 188 KB

We present a study of the electronic properties of \(\mathrm{In}_{x} \mathrm{Ga}_{1-x} \mathrm{As} / \mathrm{GaAs}\) quantum wells when grown on vicinal substrates, based on photoluminescence (PL) and PL excitation experiments under high magnetic field. The samples measured have a wide range of In c