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Effects of growth temperature and substrate misorientation in InGaAs/GaAs strained quantum wells grown by MBE

✍ Scribed by Toshiro Hayakawa; Masaharu Nagai; Hideyoshi Horie; Yoshihisa Niwata

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 542 KB
Volume: 127
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(93)90677-o

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