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Preparation and characterization of high quality inGaAs/GaAs strained multi-quantum wells grown by MBE

✍ Scribed by Hou, H.Q.; Huang, Y.; Zhou, J.M.


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
460 KB
Volume
99
Category
Article
ISSN
0022-0248

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Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w