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Oval Defects in the MBE Grown AlGaAs/InGaAs/GaAs and InGaAs/GaAs Structures

✍ Scribed by K. Klima; M. Kaniewska; K. Reginski; J. Kaniewski

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
93 KB
Volume
34
Category
Article
ISSN
0232-1300

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✦ Synopsis

Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium effusion cell temperature and also with the substrate temperature. Different mechanisms for defect nucleation depending on the substrate temperature are expected. Oval defect nucleation and formation mechanisms are essentially the same for AlGaAs, InGaAs and GaAs layers.

πŸ“œ SIMILAR VOLUMES

Interdiffusion phenomena in InGaAs/GaAs
Interdiffusion phenomena in InGaAs/GaAs superlattice structures
✍ B. SarΔ±kavak; M. K. Γ–ztΓΌrk; T. S. Mammadov; S. Γ–zΓ§elik πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 264 KB

## Abstract We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution X‐ray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temper