Oval Defects in the MBE Grown AlGaAs/InG
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K. Klima; M. Kaniewska; K. Reginski; J. Kaniewski
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Article
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1999
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John Wiley and Sons
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English
β 93 KB
Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium