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Determination of the Sb composition profile in MBE-grown GaSb/GaAs structures by high-resolution X-ray diffractometry

✍ Scribed by O. Brandt; E. Tournié; L. Tapfer; K. Ploog

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
417 KB
Volume
127
Category
Article
ISSN
0022-0248

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Bent bonds in the strained fullerene system, restricted to the [5,6] bonds, were detected by high-resolution X-ray structure analysis of the 1,2-dihydro[60]fullerene derivative 1. In addition the maxima of electron densities are higher in the [6,6] bonds than in the [5,6] bonds-an important finding