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High Resolution Determination of the Ge Depth Profile in SiGe Heterobipolar Transistor Structures by X-Ray Diffractometry

โœ Scribed by Zaumseil, P.


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
226 KB
Volume
165
Category
Article
ISSN
0031-8965

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Bent bonds in the strained fullerene system, restricted to the [5,6] bonds, were detected by high-resolution X-ray structure analysis of the 1,2-dihydro[60]fullerene derivative 1. In addition the maxima of electron densities are higher in the [6,6] bonds than in the [5,6] bonds-an important finding