Interdiffusion phenomena in InGaAs/GaAs superlattice structures

✍ Scribed by B. Sarıkavak; M. K. Öztürk; T. S. Mammadov; S. Özçelik

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 264 KB
• Volume: 45
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200900690

✦ Synopsis

Abstract

We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution X‐ray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temperature up to 775 °C. The higher temperatures bring out relaxation mechanisms; interdiffusion and favored migration. The defect structure and the defects which are observed with the increasing annealing temperature were analyzed. Firstly, the in‐plane and out‐of‐plane strains after the annealing of sample were found. Secondly, the structural defect properties such as the parallel X‐ray strain, perpendicular X‐ray strain, misfit, degree of relaxation, x composition, tilt angles and dislocation that are obtained from X‐ray diffraction (XRD) analysis were carried out at every temperature. As a result, we observed that the asymmetric peaks especially in asymmetric (224) plane was affected more than symmetric and asymmetric planes with lower polar or inclination angles due to c‐direction at low temperature. These structural properties exhibit different unfavorable behaviors for every reflection direction at the increasing temperatures. The reason is the relaxation which is caused by spatially inhomogeneous strain distribution with the increasing annealing temperature. In the InGaAs superlattice samples, this process enhances preferential migration of In atoms along the growth direction. Further increase in the annealing temperature leads to the deterioration of the abrupt interfaces in the superlattice and degradation in its structural properties. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)