Cyclotron masses in InGaAs/GaAs superlattices and InGaAs/AlAs superlattices

✍ Scribed by H. Momose; S. Uehara; N. Mori; C. Hamaguchi; H. Arimoto; T. Ikaida; N. Miura

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 140 KB
• Volume: 27
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2000.0870

✦ Synopsis

Cyclotron resonance (CR) measurements have been carried out to evaluate the effective mass of electron in (InGaAs) n /(GaAs) n superlattices (SLs) and (InGaAs) n /(AlAs) n SLs. To clarify the dependence of cyclotron mass on the monolayer number n, we measured CR signals using pulsed high-magnetic fields up to 150 T and a far-infrared laser. We found clear cyclotron resonances in the transmission of 10.6 µm at 75 T at room temperature in (InGaAs) n /(GaAs) n SLs and little dependence on the monolayer number n in the SLs. However, for (InGaAs) n /(AlAs) n SLs, a large dependence of cyclotron mass on the monolayer number n was observed. We consider that these dependencies are related to the difference between the barrier height in the SLs and the influence of nonparabolicity on the conduction subbands in the SLs.