We present direct evidence of ballistic electrons traversing nominally undoped GaAs/GaAlAs short period superlattices with different well widths. The measurements are carried out using a hot-electron transistor as an electron spectrometer. An energy tunable electron beam is injected via a tunneling
Spectroscopy of Hot Electron Photoluminescence in GaAs/AlAs Superlattices
β Scribed by V. F. Sapega; V. I. Perel; D. N. Mirlin; T. Ruf; M. Cardona; W. Winter; K. Eberl
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 225 KB
- Volume
- 215
- Category
- Article
- ISSN
- 0370-1972
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β¦ Synopsis
a), V. I. Perel (a), D. N. Mirlin (a), T. Ruf (b), M. Cardona (b), W. Winter (b), and K. Eberl (b)
π SIMILAR VOLUMES
The optical properties of (GaAs) \({ }_{n} /\) (AIAs) \(_{m}\) superlattices in the infra-red spectral region have been studied. The confinement of optical phonons has been observed in both GaAs and AlAs layers of superlattices under investigation. The superlattice modes caused by the coupling betwe
The energy relaxation of hot electrons in a strongly coupled, n-type GaAs/AlGaAs superlattice is measured by analysing the temperature and electric-field dependence of the interminiband absorption. Electrons are heated up by an electric-field pulse and the resulting change of the electron temperatur