a), V. I. Perel (a), D. N. Mirlin (a), T. Ruf (b), M. Cardona (b), W. Winter (b), and K. Eberl (b)
Hot electron spectroscopy of undoped GaAs/GaAlAs superlattices
β Scribed by C. Rauch; G. Strasser; K. Unterrainer; L. Hvozdara; W. Boxleitner; E. Gornik; B. Brill; U. Meirav
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 75 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
β¦ Synopsis
We present direct evidence of ballistic electrons traversing nominally undoped GaAs/GaAlAs short period superlattices with different well widths. The measurements are carried out using a hot-electron transistor as an electron spectrometer. An energy tunable electron beam is injected via a tunneling barrier into the field free superlattice and the transmitted collector current is measured as a function of the injector energy. Significant increase of the collector current is observed due to miniband conduction in the superlattice. The transfer characteristics shows excellent agreement with the calculated positions of the minibands and minigaps. Longitudinal optical (LO) phonon replicas of the eigenstate structure are present.
π SIMILAR VOLUMES
The energy relaxation of hot electrons in a strongly coupled, n-type GaAs/AlGaAs superlattice is measured by analysing the temperature and electric-field dependence of the interminiband absorption. Electrons are heated up by an electric-field pulse and the resulting change of the electron temperatur
The optical properties of (GaAs) \({ }_{n} /\) (AIAs) \(_{m}\) superlattices in the infra-red spectral region have been studied. The confinement of optical phonons has been observed in both GaAs and AlAs layers of superlattices under investigation. The superlattice modes caused by the coupling betwe