𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Γ–X Coupling in Diffused AlAs/GaAs Superlattices

✍ Scribed by N. Shtinkov; S.J. Vlaev; V. Donchev

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
50 KB
Volume
221
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of Γ–X mixing on carrier trans
Influence of Γ–X mixing on carrier transport and photoluminescence in GaAs/AlAs type-I superlattices
✍ N. Ohtani; M. Hosoda; H. Mimura; K. Tominaga; T. Watanabe; K. Fujiwara 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 61 KB

We report on the effects of field-induced -X resonances on carrier transport and optical properties of GaAs/AlAs type-I short-period superlattices (SLs). We have observed an anomalously delayed photocurrent and 2-hh1 photoluminescence originating from X1-2 mixing. These observations clearly suggest

Resonant Γ–X–Γ tunneling in GaAs/AlAs/Ga
Resonant Γ–X–Γ tunneling in GaAs/AlAs/GaAs single barrier heterostructures at zero and elevated magnetic field
✍ J.J. Finley; M.S. Skolnick; J.W. Cockburn; R. Teissier; R. Grey; G. Hill; M.A. P 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 139 KB

We report the observation of resonant tunneling and magneto-tunneling between states of different effective mass derived from zone centre ( ) and zone edge (X ) points of the Brillouin zone in single AlAs barrier diodes. The nature of the X states involved (longitudinal X z or transverse X xy ) is d

Cyclotron masses in InGaAs/GaAs superlat
Cyclotron masses in InGaAs/GaAs superlattices and InGaAs/AlAs superlattices
✍ H. Momose; S. Uehara; N. Mori; C. Hamaguchi; H. Arimoto; T. Ikaida; N. Miura 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 140 KB

Cyclotron resonance (CR) measurements have been carried out to evaluate the effective mass of electron in (InGaAs) n /(GaAs) n superlattices (SLs) and (InGaAs) n /(AlAs) n SLs. To clarify the dependence of cyclotron mass on the monolayer number n, we measured CR signals using pulsed high-magnetic fi

X-Ray Diffraction Analysis of the In/Ga
X-Ray Diffraction Analysis of the In/Ga and In/Al Interface Diffusion in Superlattices (GaAs)n(InAs)(AlAs)n/GaAs(001) and (AlAs)n(InAs)(GaAs)n/GaAs(001)
✍ Jose Fayos; Mercedes Perez-Mendez 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 225 KB

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice