X-Ray Diffraction Analysis of the In/Ga and In/Al Interface Diffusion in Superlattices (GaAs)n(InAs)(AlAs)n/GaAs(001) and (AlAs)n(InAs)(GaAs)n/GaAs(001)

✍ Scribed by Jose Fayos; Mercedes Perez-Mendez

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 225 KB
• Volume: 107
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.1993.1362

✦ Synopsis

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on (\mathrm{GaAs}(001)) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice, the first in the growth sequence ((\mathrm{GaAs}){n}(\mathrm{InAs})(\mathrm{AlAs}){n} \ldots). . and the second in ((\mathrm{AlAs}){n}(\mathrm{InAs})(\mathrm{GaAs}){n}) . . . . It is shown that both growths produce the same extension In/Ga diffusion along five layers, although with different deformation of the interlayer spacings. 1993 Academic Press, Inc.