Type-I and type-II Stark ladders in an InGaAs/GaAs superlattice
โ Scribed by K. Gibb; A.P. Roth
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 242 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
We present resonance reflectivity measurements performed on graded GaAs/AlAs superlattices in the transitional region from type I to type II. A theory of exciton states and exciton oscillator strength is developed making allowance for the mixing of \(\Gamma_{1}, X_{1}\) and \(X_{3}\) electron states
A. Sayari (a), A. Mlayah (b), F. F. Charfi (a), R. Carles (b), and R. Planel (c)
We present a new examination of the phonon modes participating in the recombination processes from type II GaAs/AlAs superlattices. This is achieved through the use of a novel Raman resonance at the type II band gap, which provides a very precise, in-situ measurement technique for the important phon
We report on the effects of field-induced -X resonances on carrier transport and optical properties of GaAs/AlAs type-I short-period superlattices (SLs). We have observed an anomalously delayed photocurrent and 2-hh1 photoluminescence originating from X1-2 mixing. These observations clearly suggest
We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -ba