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Exciton oscillator strength in GaAs/AlAs superlattices near type I-type II transition

✍ Scribed by I.L. Aleiner; E.L. Ivchenko; V.P. Kochereshko; G.L. Sandler; P. Lavallard; R. Planel

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
139 KB
Volume
13
Category
Article
ISSN
0749-6036

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✦ Synopsis

We present resonance reflectivity measurements performed on graded GaAs/AlAs superlattices in the transitional region from type I to type II. A theory of exciton states and exciton oscillator strength is developed making allowance for the mixing of (\Gamma_{1}, X_{1}) and (X_{3}) electron states in the superlattice. Experimental and theoretical results are compared taking into account effects of superlattice imperfections.

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