𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Evidence for interlayer donor–acceptor recombination in type II GaAs/AlAs superlattices

✍ Scribed by K.S. Zhuravlev; D.A. Petrakov; A.M. Gilinsky; T.S. Shamirzaev; V.V. Preobrazhenskii; B.R. Semyagin; M.A. Putyato

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
160 KB
Volume
28
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

✦ Synopsis

Steady-state and time-resolved photoluminescence of (GaAs) 7 (AlAs) 9 type II superlattices grown simultaneously by molecular beam epitaxy on (311)A and (100) GaAs substrates, intentionally undoped or uniformly doped with silicon, has been studied. It is shown that at temperatures T > 30 K, the dominant line in the photoluminescence spectra of superlattices is caused by donor-acceptor recombination between the donors located in the AlAs layers and the acceptors in the GaAs layers. The sum of the binding energies of the donors and acceptors in the pairs has been determined. A spectrally-dependent linear polarization of the donor-acceptor line along the direction of the interface corrugation of the superlattice has been discovered in the spectra of (311)A-oriented superlattices.

📜 SIMILAR VOLUMES

An investigation of the recombination me
An investigation of the recombination mechanisms associated with the X states in type II GaAs/AlAs superlattices
✍ W.R. Tribe; S.G. Lyapin; P.C. Klipstein; G.W. Smith; R. Grey 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 114 KB

We present a new examination of the phonon modes participating in the recombination processes from type II GaAs/AlAs superlattices. This is achieved through the use of a novel Raman resonance at the type II band gap, which provides a very precise, in-situ measurement technique for the important phon

Identification of zone boundary and inte
Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices
✍ T. Gilmour; P.C. Klipstein; W.R. Tribe; G.W. Smith 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 89 KB

We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -ba