Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices

✍ Scribed by T. Gilmour; P.C. Klipstein; W.R. Tribe; G.W. Smith

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 89 KB
• Volume: 23
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0219

✦ Synopsis

We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -band gap to enable a direct comparison, in the same sample, of zone boundary phonons with the photoluminescence (PL) phonon satellite energies. We present PL measurements on two complementary SPSLs to identify the reversal in the parity of the GaAs IF branch, where coupling is only allowed to the IF(+) branch. We also identify weak satellites, not previously reported, between the IF(+) and LA(X) satellites.