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Band-to-band lasing in type-II GaAs/AlAs short-period superlattices

โœ Scribed by L.C. Lew Yan Voon; L.R. Ram-Mohan


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
172 KB
Volume
14
Category
Article
ISSN
0749-6036

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We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -ba