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Time-resolved spectra and kinetics of the exciton photoluminescence in different types of GaAs/AlAs superlattices

โœ Scribed by S. Krylyuk; V.G. Litovchenko; D.V. Korbutyak; H.T. Grahn; K.H. Ploog

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
297 KB
Volume
29
Category
Article
ISSN
0749-6036

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โœฆ Synopsis

The temperature dependence of the recombination dynamics of excitons is investigated by time-resolved photoluminescence spectroscopy in (GaAs) n /(AlAs) n superlattices, where n denotes the layer thickness in monolayers, for different types of band structures. In directgap superlattices with a layer thickness of the order or larger than the exciton Bohr radius, the carrier dynamics is dominated by the transfer from light-hole to heavy-hole excitons. When the layer thickness becomes smaller than the exciton radius, the dynamics of free excitons is controlled by localization. vb In quasi-direct and indirect-gap superlattices, the influence of lateral potential fluctuations due to interface roughness completely governs exciton recombination.

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