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MOVPE of In(GaAs)P/InGaAs MQW structures

✍ Scribed by P. Wiedemann; M. Klenk; W. Körber; U. Koerner; R. Weinmann; E. Zielinski; P. Speier


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
288 KB
Volume
107
Category
Article
ISSN
0022-0248

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## Abstract We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution X‐ray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temper