MOVPE of In(GaAs)P/InGaAs MQW structures
✍ Scribed by P. Wiedemann; M. Klenk; W. Körber; U. Koerner; R. Weinmann; E. Zielinski; P. Speier
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 288 KB
- Volume
- 107
- Category
- Article
- ISSN
- 0022-0248
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📜 SIMILAR VOLUMES
Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium
## Abstract We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution X‐ray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temper