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The nature and control of morphology and the formation of defects in InGaAs epilayers and InAs/GaAs superlattices grown via MBE on GaAs(100)

✍ Scribed by S. Guha; K.C. Rajkumar; A. Madhukar


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
610 KB
Volume
111
Category
Article
ISSN
0022-0248

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Hard Heteroepitaxy on 2° Off-oriented Ga
✍ M. Sc. J. Sadowski; Dr. E. Dynowska; Dr. K. Regiński; Prof. M. A. Herman 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 641 KB

## Abstract The MBE growth of PbTe layers on GaAs (100) 2° off‐oriented substrates belongs to hard heteroepitaxy, because the two materials differ strongly in their lattice constants and, in addition, they also exhibit different crystal structures. Consequently, phases with different surface orient