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Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy

โœ Scribed by Mitsuaki Yano; Kanji Yoh; Takanori Iwawaki; Yoshio Iwai; Masataka Inoue

Book ID
107791859
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
405 KB
Volume
111
Category
Article
ISSN
0022-0248

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Effect of different strain reducing laye
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โœ S.P. Ryu; N.K. Cho; J.Y. Lim; W.J. Choi; J.D. Song; J.I. Lee; Y.T. Lee; C.G. Par ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 449 KB

We investigated the effect of InGaAs and AlGaAs combination strain reducing layers on InAs quantum dots (QDs) grown by migration enhanced epitaxy. The samples were examined by cross-sectional transmission electron microscopy, low-temperature and power dependent photoluminescence (PL). We observed th