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Spectroscopy study of monolayer InAs/GaAs single and multiple quantum wells grown by molecular beam epitaxy

✍ Scribed by O. Brandt; R. Cingolani; L. Tapfer; G. Scamarcio; K. Ploog

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
371 KB
Volume
9
Category
Article
ISSN
0749-6036

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✍ S.F. Yoon; H.M. Li; K. Radhakrishnan; D.H. Zhang πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 263 KB

Low-temperature photoluminescence measurements were carried out to assess the changes in the properties of strained GaAs/InGaAs/GaAs multi-quantum-wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without growth interruption at the heterointerfaces. Sharp exci